H9N03LA Description
IPDH9N03LA G IPSH9N03LA G OptiMOS®2 Power-Transistor.
H9N03LA Key Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC1) for target application
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant