SPD09N05 Description
SPD 09N05 SIPMOS® Power Transistor.
SPD09N05 Key Features
- N channel
- Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
- Avalanche rated
- 175˚C operating temperature
- ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1)
- VDS≥2-ID-RDS(on)max , ID = 6.5 A