SPP80P06P Description
Preliminary data SPP80P06P SPB80P06P SIPMOS ® Power-Transistor.
SPP80P06P Key Features
- 60 0.023 -80
- 320 823 34 6 kV/µs mJ
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ
- SPP80P06P SPB80P06P
- 60 -2.1
- VGS = -20 V, VDS = 0 V
- 36 4026 1252 437 24