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BC846AW Description

BC846W...BC850W NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  plementary types: 150 mW °C 30 30 30 5 mA mA V Junction - soldering point 1) RthJS Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848/849W 105 Values typ.