BFR181T Description
BFR181T NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! 150 Junction - soldering point 2) RthJS 405 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R...