BFR181W Datasheet | Siemens Semiconductor Group

BFR 181W NPN Silicon RF Transistor - For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA - fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181W RFs Q62702-F1491 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 ≤ 345 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 90 °C Junction temperature Ambient...