BFR180W Description
BFR 180W NPN Silicon RF Transistor For low-power amplifiers in mobile munication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 ≤ 790 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 126 °C Junction temperature Ambient temperature Storage temperature Junction - soldering point...