Datasheet Summary
NPN Silicon RF Transistor Preliminary data
For low-noise, high-gain broadband amplifiers at
3 collector currents from 2 mA to 30 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR183T
Maximum Ratings Parameter
Marking RHs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 65 5 250 150 mW °C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 83°C 1) Junction temperature Ambient temperature Storage temperature
-65...
