Datasheet Summary
Low Noise Silicon Bipolar RF Transistor
- For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
- fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
- Pb-free (RoHS pliant) package
- Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR183
Marking
Pin Configuration
RHs 1=B 2=E 3=C
Package SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 60 °C Junction temperature Storage...
