BFR183 - Low Noise Silicon Bipolar RF Transistor

Infineon Technologies AG

Datasheet Details

Part number	BFR183
Manufacturer	Infineon Technologies AG
File Size	607.75 KB
Description	Low Noise Silicon Bipolar RF Transistor
Datasheet	BFR183 Datasheet

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BFR183T	NPN Silicon RF Transistor
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BFR181	Low Noise Silicon Bipolar RF Transistor

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR183 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR183 Marking Pin Configuration RHs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 60 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 65 5 450 150 -55 ...