BFR183 Datasheet and Specifications PDF

The BFR183 is a Low Noise Silicon Bipolar RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBFR183 Datasheet
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) pack. ion Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR183 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cut.
Part NumberBFR183 Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive devi. eristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC.

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DigiKey 0 1+ : 0.31 USD
10+ : 0.211 USD
25+ : 0.1872 USD
100+ : 0.1608 USD
View Offer