BFR183W Datasheet | Siemens Semiconductor Group

BFR 183W NPN Silicon RF Transistor - For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA - fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q62702-F1493 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 ≤ 210 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 56 °C Junction temperature Ambient...