Datasheet Summary
BFR 180
NPN Silicon RF Transistor
- For low-power amplifiers in mobile munication systems (pager) at collector currents from 0.2mA to 2.5mA
- fT = 7GHz F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 180 RDs Q62702-F1296 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.5 mW 30 150
- 65 ... + 150
- 65 ... + 150 ≤ 780 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 127 °C
Junction temperature...
