Datasheet Summary
NPN Silicon RF Transistor
For low-power amplifiers in mobile
3 munication systems (pager) at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz
F = 2.1 dB at 900 MHz
2 1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR180W
Maximum Ratings Parameter
Marking RDs 1=B
Pin Configuration 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT323
Value 8 10 10 2 4 0.5 30 150 -65 ... 150 -65 ... 150 mW °C mA Unit V
3=C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 126 °C 1) Junction temperature Ambient...
