The BFR180W is a NPN Silicon RF Transistor.
| Part Number | BFR180W Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BFR180W NPN Silicon RF Transistor For low-power amplifiers in mobile 3 communication systems (pager) at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz 2 1 VSO05561 . TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE. |
| Part Number | BFR180W Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic disc. Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V µA 100 nA 100 µA 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff c. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BFR180 | Infineon | NPN Silicon RF Transistor |
| BFR180 | Siemens Semiconductor Group | NPN Silicon RF Transistor |