The BFR183W is a Low Noise Silicon Bipolar RF Transistor.
| Package | SOT |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BFR183W Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and . definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown vo. |
| Part Number | BFR183W Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive dev. racteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BFR183TF | Vishay | Silicon NPN Planar RF Transistor |
| BFR183T | Infineon | NPN Silicon RF Transistor |
| BFR183TW | Vishay | Silicon NPN Planar RF Transistor |
| BFR183 | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFR183 | Siemens Semiconductor Group | NPN Silicon RF Transistor |
| BFR183T | Vishay | Silicon NPN Planar RF Transistor |