BFR183W Datasheet and Specifications PDF

The BFR183W is a Low Noise Silicon Bipolar RF Transistor.

Key Specifications

PackageSOT
Pins3
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberBFR183W Datasheet
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) and . definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown vo.
Part NumberBFR183W Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive dev. racteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V.

Price & Availability

Seller Inventory Price Breaks Buy
Farnell 0 5+ : 0.32 GBP
25+ : 0.29 GBP
100+ : 0.28 GBP
250+ : 0.238 GBP
View Offer
Farnell 0 100+ : 0.28 GBP
250+ : 0.238 GBP
700+ : 0.214 GBP
2000+ : 0.193 GBP
View Offer
Worldway Electronics 18939 7+ : 0.0231 USD
10+ : 0.0227 USD
100+ : 0.022 USD
500+ : 0.0213 USD
View Offer