BFR183T Datasheet and Specifications PDF

The BFR183T is a NPN Silicon RF Transistor.

Key Specifications

Max Operating Temp150 °C
Part NumberBFR183T Datasheet
ManufacturerInfineon
Overview BFR183T NPN Silicon RF Transistor Preliminary data  For low-noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: . °C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V.
Part NumberBFR183T Datasheet
DescriptionSilicon NPN Planar RF Transistor
ManufacturerVishay
Overview BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at. D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR183T Marking: RH Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR183TW Marking: WRH Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherw.

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