• Part: BFR181W
  • Description: Low Noise Silicon Bipolar RF Transistor
  • Manufacturer: Infineon
  • Size: 661.40 KB
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Datasheet Summary

Low Noise Silicon Bipolar RF Transistor - For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA - fT = 8 GHz, NFmin = 0.9 dB at 900 MHz - Easy to use Pb-free (RoHS pliant) and halogen free industry standard package with visible leads - Qualification report according to AEC-Q101 available 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181W Marking Pin Configuration RFs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base...