BFR181 Datasheet | Infineon

Low Noise Silicon Bipolar RF Transistor - For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA - fT = 8 GHz, NFmin = 0.9 dB at 900 MHz - Pb-free (RoHS pliant) package - Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181 Marking Pin Configuration RFs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 91 °C Junction temperature Ambient...