The BFR181 is a Low Noise Silicon Bipolar RF Transistor.
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 900 µm |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BFR181 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) pa. ition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage . |
| Part Number | BFR181 Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive de. cteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BFR181T | Vishay | Silicon NPN Planar RF Transistor |
| BFR181T | Infineon | NPN Silicon RF Transistor |
| BFR181TW | Vishay | Silicon NPN Planar RF Transistor |
| BFR181W | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFR181W | Siemens Semiconductor Group | NPN Silicon RF Transistor |