BFR193T Description
BFR193T NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 3 F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! 150 Junction - soldering point 2) RthJS 210 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer...