BFR193 Datasheet | Siemens Semiconductor Group

BFR 193 NPN Silicon RF Transistor - For low noise, high-gain amplifiers up to 2GHz - For linear broadband amplifiers - fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 193 RCs Q62702-F1218 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 ... + 150 - 65 ... + 150 ≤ 140 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 69 °C Junction temperature Ambient temperature...