BFR193 Datasheet and Specifications PDF

The BFR193 is a Low Noise Silicon Bipolar RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberBFR193 Datasheet
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Q. e AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-04 BFR193 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff cur.
Part NumberBFR193 Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, ob. ics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 .

Price & Availability

Seller Inventory Price Breaks Buy
Newark 4240 5+ : 0.357 USD
10+ : 0.258 USD
25+ : 0.234 USD
50+ : 0.221 USD
View Offer
Newark 0 18000+ : 0.166 USD
36000+ : 0.163 USD
72000+ : 0.162 USD
View Offer
Rutronik 18000 3000+ : 0.1306 USD
6000+ : 0.125 USD
12000+ : 0.1222 USD
18000+ : 0.1157 USD
View Offer