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BFR193T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
3
F = 1.3 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR193T
Maximum Ratings Parameter
Marking RCs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 80 10 280 150 mW °C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 91 °C 1) Junction temperature Ambient temperature Storage temperature
-65 ... 150 -65 ...
BFR193T Datasheet
