Datasheet Summary
BFR 193W
NPN Silicon RF Transistor
- For low noise, high-gain amplifiers up to 2GHz
- For linear broadband amplifiers
- fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 193W RCs Q62702-F1510 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150
- 65 ... + 150
- 65 ... + 150 ≤ 150 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 63 °C
Junction temperature Ambient temperature...
