BFR193W Overview
BFR 193W NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 ≤ 150 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 63 °C Junction temperature Ambient temperature Storage temperature Junction - soldering point RthJS K/W 1) TS is measured on...


