BFR193W Overview
Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS pliant) package Qualification report according to AEC-Q101 available BFR193W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! - 100 100 1 140 Unit V µA nA µA - 2 2014-04-07 BFR193W at TA = 25 °C, unless otherwise...

