Datasheet Summary
Low Noise Silicon Bipolar RF Transistor
- For low noise, high-gain amplifiers up to 2 GHz
- For linear broadband amplifiers
- fT = 8 GHz, NFmin = 1 dB at 900 MHz
- Pb-free (RoHS pliant) package
- Qualification report according to AEC-Q101 available
32 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR193W
Marking
Pin Configuration
RCs
1=B
2=E
3=C
Package SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 63°C Junction temperature Storage...
