The BFR193T is a Silicon NPN Planar RF Transistor.
| Package | SOT-23 |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Part Number | BFR193T Datasheet |
|---|---|
| Manufacturer | Vishay |
| Overview | BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power. D Low noise figure D High transition frequency fT = 8 GHz D Excellent large-signal behaviour 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR193T Marking: RC Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR193TW Marking: WRC Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emit. |
| Part Number | BFR193T Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Infineon |
| Overview | BFR193T NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 3 F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electr. unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Worldway Electronics | 16854 | - | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| BFR193 | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFR193W | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFR193TW | Vishay | Silicon NPN Planar RF Transistor |
| BFR193 | Siemens Semiconductor Group | NPN Silicon RF Transistor |
| BFR193W | Siemens Semiconductor Group | NPN Silicon RF Transistor |
| BFR193L3 | Infineon | NPN Bipolar RF Transistor |
| BFR193F | Infineon | Low Noise Silicon Bipolar RF Transistor |