BGB540LNA Description
Noise figure and gain results shown do not have any PCB loss extracted from them. )LJXUH displays the cross section of the application board. The actually used microstrip structure is the one with the 0.2 mm FR4 dielectric.
BGB540LNA is BGB540 as a 1.85 GHz Low Noise Amplifier manufactured by Infineon .
| Part Number | Description |
|---|---|
| BGB540 | Active Biased RF Transistor |
| BGB540 | A 35 dB Gain-Sloped LNB I.F. Amplifier |
| BGB420 | Active Biased Transistor |
Noise figure and gain results shown do not have any PCB loss extracted from them. )LJXUH displays the cross section of the application board. The actually used microstrip structure is the one with the 0.2 mm FR4 dielectric.