IPB031NE7N3G Description
IPB031NE7N3 G OptiMOSTM3 Power-Transistor.
IPB031NE7N3G Key Features
- Optimized technology for synchronous rectification
- Ideal for high frequency switching and DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target
IPB031NE7N3G Applications
- Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G