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ITCH22180B2 Datasheet PDF

Innogration ITCH22180B2

The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
Part No. ITCH22180B2
Datasheet ITCH22180B2 Download
Manufacturer
Innogration
Description High Power RF LDMOS FET
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ITCH22180B2 datasheet page 1 preview

DESCRIPTION

ITCH22180B2
●Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (dB) P-1dB (dBm) ηD@P-1 (%) P-3dB (dBm) ηD@P-3 (%) 2110 MHz 17.8 52.5 51.8 53.6 55.5 2140 MHz 17.9 52.3 51.5 53.5 55.5 2170 MHz 17.9 52.0 51.2 53.2 55.5 ITCH22180B2E

FEATURES

● High Efficiency and Linear Gain Operations
● Integrated ESD Protection
● Internally Matched for Ease of Use
● Excellent thermal stability, low HCI drift
● Large Positive and Negativ
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