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ITCH22180B2E Datasheet

Manufacturer: Innogration

This datasheet includes multiple variants, all published together in a single manufacturer document.

ITCH22180B2E datasheet preview

Datasheet Details

Part number ITCH22180B2E
Datasheet ITCH22180B2E ITCH22180B2 Datasheet (PDF)
File Size 294.16 KB
Manufacturer Innogration
Description High Power RF LDMOS FET
ITCH22180B2E page 2 ITCH22180B2E page 3

ITCH22180B2E Overview

The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22180B2 Typical Performance (On Innogration fixture with device soldered):.

ITCH22180B2E Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negativ

ITCH22180B2E Applications

  • Typical Performance (On Innogration fixture with device soldered)
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ITCH22180B2E Distributor

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