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MJ1509 - High Power RF LDMOS FET

Description

The MJ1509 is a 90-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1.5 GHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Typic

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protectio.

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Datasheet preview – MJ1509

Datasheet Details

Part number MJ1509
Manufacturer Innogration
File Size 272.58 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MJ1509 Datasheet
Additional preview pages of the MJ1509 datasheet.

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Full PDF Text Transcription

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MJ1509 LDMOS TRANSISTOR 90W, 28V High Power RF LDMOS FETs Description The MJ1509 is a 90-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1.5 GHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MJ1509 Preliminary Datasheet V1.0 MJ1509 Typical Performance (on Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 500 mA, CW. Frequency Gp (dB) P-1dB (W) D@P-1 (%) 1000 MHz 18 90 60 Typical Performance (on Innogration broadband demo): VDD = 24 Volts, IDQ = 600 mA, CW. Frequency(MHz) Pin(dBm) P-1dB (W) Gp (dB) D@P-1 (%) 30 29.40 57.54 18.20 49.33 60 30.10 75.86 18.70 57.36 100 29.00 79.43 20.00 60.18 200 28.30 79.43 20.70 64.
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