This datasheet includes multiple variants, all published together in a single manufacturer document.
IN25AA040N Key Features
- Data capacity, QINF: for IN25АА020N, IN25АА020D for IN25АА040N, IN25АА040D
- Maximum stand-by current, ICC
- Maximum read current, IOCCR
- Maximum write current, IOCCW
- Byte & page (16 bytes) data write modes are available
- Endurance NE/W, …...1000000 cycles
- Write protection block protect none, 1/4, 1/2, or all of storage
- Power on/off data protection circuitry
- Supply voltage UCC 1,8 … 5,5 V
- Temperature range -40 … +85°C
More Datasheets from Integral
| Part Number |
Description |
|
IN25AA040D
|
NONVOLATILE ELECTRICALLY ERASABLE PROM |
|
IN25AA020D
|
NONVOLATILE ELECTRICALLY ERASABLE PROM |
|
IN25AA020N
|
NONVOLATILE ELECTRICALLY ERASABLE PROM |
|
IN25AA080D
|
NONVOLATILE ELECTRICALLY ERASABLE PROM |
|
IN25AA080N
|
NONVOLATILE ELECTRICALLY ERASABLE PROM |
|
IN25AA160D
|
NONVOLATILE ELECTRICALLY ERASABLE PROM |
|
IN25AA160N
|
NONVOLATILE ELECTRICALLY ERASABLE PROM |
|
IN24AA02
|
2K 1.8V CMOS Serial EEPROMs |
