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IS41C16100S - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Download the IS41C16100S datasheet PDF. This datasheet also covers the IS41LV16100S variant, as both devices belong to the same 1m x 16 (16-mbit) dynamic ram with edo page mode family and are provided as variant models within a single manufacturer datasheet.

General Description

16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

Key Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs; tristate I/O.
  • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms.
  • JEDEC standard pinout.
  • Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S).
  • Byte Write and Byte Read operation via two CAS.
  • Industrail Temperature Range -40°C to 85°C www. DataSheet4U.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS41LV16100S_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS41C16128 128K x 16 (2-MBIT) DYNAMIC RAM ISSI
IS41C16256 256K x 16 (4-MBIT) DYNAMIC RAM ISSI
IS41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
IS41C8512 512K x 8 (4-MBIT) DYNAMIC RAM Integrated Circuit Solution
IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41C16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41C16256A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41C16257A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41C4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS41C16100S IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40°C to 85°C www.DataSheet4U.com DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode.