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IS41C8200 - 2M x 8 (16-MBIT) DYNAMIC RAM

General Description

® JUNE 2001 Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: -- 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 5V±10% or 3.3V ± 10% Byte

Key Features

  • ISSI.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41C8205 2M x 8 (16-MBIT) DYNAMIC RAM
IS41C85120 512K x 8 (4-MBIT) DYNAMIC RAM
IS41C85120A 512K x 8 (4-MBIT) DYNAMIC RAM
IS41C85125 512K x 8 (4-MBIT) DYNAMIC RAM
IS41C85125A 512K x 8 (4-MBIT) DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com FEATURES ISSI DESCRIPTION ® JUNE 2001 • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.