IS41LV44002B - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Product Overview

Integrated Silicon Solution

Part number	IS41LV44002B
Manufacturer	Integrated Silicon Solution
File Size	193.78 KB
Description	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Datasheet	IS41LV44002B Datasheet
Additional preview pages of the IS41LV44002B datasheet.

The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Extended Data-Out (EDO) Page Mode access cycle.
TTL compatible inputs and outputs.
Refresh Interval:.
2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Industrial Temperature Range: -40°C to +85°C Lead-free available www. DataSheet4U. com ISSI JULY 2006 ®.

📁 Similar Datasheet

IS41LV44052B - 4M x 4 (16-MBIT) DYNAMIC RAM (ISSI)
IS41LV16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)
IS41LV16257 - 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE (Integrated Silicon Solution Inc)
IS41LV1665 - 64K x16 bit Dynamic RAM (ICSI)
IS41LV32256 - EDO DYNAMIC RAM (ISSI)
IS41LV8512 - 512K x 8 (4-MBIT) DYNAMIC RAM (Integrated Circuit Solution)
IS41C16128 - 128K x 16 (2-MBIT) DYNAMIC RAM (ISSI)
IS41C16256 - 256K x 16 (4-MBIT) DYNAMIC RAM (ISSI)

Other Datasheets by Integrated Silicon Solution

Published: Apr 17, 2010 |