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IS41LV44002B

Manufacturer: ISSI (now Infineon)

IS41LV44002B datasheet by ISSI (now Infineon).

IS41LV44002B datasheet preview

IS41LV44002B Datasheet Details

Part number IS41LV44002B
Datasheet IS41LV44002B_IntegratedSiliconSolution.pdf
File Size 193.78 KB
Manufacturer ISSI (now Infineon)
Description 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002B page 2 IS41LV44002B page 3

IS41LV44002B Overview

The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

IS41LV44002B Key Features

  • Extended Data-Out (EDO) Page Mode access cycle
  • TTL patible inputs and outputs
  • Refresh Interval
  • 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 3.3V ± 10% Byte Write a
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

View all ISSI (now Infineon) datasheets

Part Number Description
IS41LV44002 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV44004 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV44052 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV44054 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

IS41LV44002B Distributor

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