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IS41LV44004 Datasheet 4m X 4 (16-mbit) Dynamic Ram

Manufacturer: ISSI (now Infineon)

Overview: IS41C4400X IS41LV4400X SERIES 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE ISSI® ..

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Key Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs.
  • Refresh Interval:.
  • 2,048 cycles/32 ms.
  • 4,096 cycles/64 ms.
  • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • Single power supply:.
  • 5V±10% or 3.3V ± 10%.
  • Byte Write and Byte Read operation via two CAS.
  • Industrial temperature range -40°C to 85°C.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS41LV44002 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44052 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV44054 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

IS41LV44004 Distributor