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IS42S32800B - SYNCHRONOUS DYNAMIC RAM

General Description

The ISSI IS42S32800B is a high-speed CMOS configured as a quad 2M x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK).

Key Features

  • Concurrent auto precharge.
  • Clock rate:166/143 MHz.
  • Fully synchronous operation.
  • Internal pipelined architecture.
  • Four internal banks (2M x 32bit x 4bank).
  • Programmable Mode -CAS#Latency:2 or 3 -Burst Length:1,2,4,8,or full page -Burst Type:interleaved or linear burst -Burst-Read-Single-Write.
  • Burst stop function.
  • Individual byte controlled by DQM0-3.
  • Auto Refresh and Self Refresh.
  • 4096 refresh cycles/64ms (15.6µs/row).
  • Single +3.3V ±0.3V po.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S32800B 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES · Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank) · Programmable Mode -CAS#Latency:2 or 3 -Burst Length:1,2,4,8,or full page -Burst Type:interleaved or linear burst -Burst-Read-Single-Write · Burst stop function · Individual byte controlled by DQM0-3 · Auto Refresh and Self Refresh · 4096 refresh cycles/64ms (15.6µs/row) · Single +3.3V ±0.3V power supply · Interface:LVTTL · Package: 86 Pin TSOP-2,0.50mm Pin Pitch 8x13mm, 90 Ball BGA, Ball pitch 0.8mm · Pb-free package is available. www.DataSheet4U.