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IS42S32800 Datasheet 2m Words X 32 Bits X 4 Banks (256-mbit) Synchronous Dram

Manufacturer: ISSI (now Infineon)

Overview: IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM P JANUARY.

General Description

The ISSI IS42S32800 is a high-speed CMOS configured as a quad 2M x 32 DRAM with asynchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

Each of the 2M x 32 bit banks is organized as 4096 rows by 512 columns by 32 bits.

Read and write accesses start at a selected locations in a programmed sequence.

Key Features

  • Concurrent auto precharge.
  • Clock rate:166/143 MHz.
  • Fully synchronous operation.
  • Internal pipelined architecture.
  • Four internal banks (2M x 32bit x 4bank).
  • Programmable Mode CAS# Latency: 2 or 3 Burst Length:1,2,4,8,or full page Burst Type: interleaved or linear burst Burst-Read-Single-Write.
  • Burst stop function.
  • Individual byte controlled by DQM0-3.
  • Auto Refresh and Self Refresh.
  • 409.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS42S32800B SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS42S32800D 8M x 32 256Mb SYNCHRONOUS DRAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42S32800G 256Mb SYNCHRONOUS DRAM
IS42S32800J 256Mb SYNCHRONOUS DRAM
IS42S32800L 8M x 32 256Mb SYNCHRONOUS DRAM
IS42S32160D 512Mb SDRAM
IS42S32160F 512Mb SDRAM
IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200E SYNCHRONOUS DYNAMIC RAM
IS42S32200L 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32200N 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32400E 128Mb SYNCHRONOUS DRAM

IS42S32800 Distributor