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IS42S32800D - 8M x 32 256Mb SYNCHRONOUS DRAM

General Description

A0-A11 A0-A8 BA0, BA1 DQ0 to DQ31 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM0-DQM3 Vdd Vss Vddq Vssq NC Wri

Key Features

  • Clock frequency: 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 3.3V + 0.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Com.

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📁 Similar Datasheet

Part Number Description Manufacturer
IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM ISSI
IS42S32800G 256Mb SYNCHRONOUS DRAM ISSI
IS42S32800J 256Mb SYNCHRONOUS DRAM ISSI
IS42S32800L 8M x 32 256Mb SYNCHRONOUS DRAM ISSI
IS42S32160D 512Mb SDRAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S32800B SYNCHRONOUS DYNAMIC RAM
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160B 256-MBIT SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S32800D IS45S32800D www.DataSheet4U.com 8M x 32 256Mb SYNCHRONOUS DRAM APRIL 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.