IS43R32160E

Manufacturer: ISSI (now Infineon)

IS43R32160E datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS43R32160E Datasheet Details

IS43R86400E IS43/46R16320E, IS43/46R32160E 16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION 512Mb DDR SDRAM NOVEMBER 2013.

VDD and VDDQ: 2.5V ± 0.2V (-5, -6)
VDD and VDDQ: 2.5V ± 0.1V (-4)
SSTL_2 patible I/O
Double-data rate architecture; two data transfers
Bidirectional, data strobe (DQS) is transmitted/
DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs
Differential clock inputs (CK and CK)
DLL aligns DQ and DQS transitions with CK transitions
mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Four internal banks for concurrent operation

Part Number	Description
IS43R32160D	16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43R32400A	4Meg x 32 128-MBIT DDR SDRAM
IS43R32400D	128Mb DDR SDRAM
IS43R32400E	128Mb DDR SDRAM
IS43R32800	256Mb DDR Synchronous DRAM
IS43R32800B	256Mb DDR Synchronous DRAM PRELIMINARY INFORMATION
IS43R32800F	256Mb DDR SDRAM
IS43R16160	256Mb Synchronous DRAM
IS43R16160A	16Meg x 16 256-MBIT DDR SDRAM
IS43R16160F	256Mb DDR SDRAM