IS43R32160E - 512Mb DDR SDRAM

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS43R32160E
Manufacturer	Integrated Silicon Solution
File Size	699.72 KB
Description	512Mb DDR SDRAM
Datasheet	IS43R32160E Datasheet
Note	This datasheet PDF includes multiple part numbers: IS43R32160E, IS43R86400E. Please refer to the document for exact specifications by model.
Additional preview pages of the IS43R32160E datasheet.

Product details

Description

x8 A0-A12 Row Address Input A0-A9, A11 Column Address Input BA0, BA1 Bank Select Address DQ0 DQ7 Data I/O CK, CK System Clock Input CKE Clock Enable CS Chip Select CAS Column Address Strobe Command RAS Row Address Strobe Command WE Write Enable 4 66 VSS 65 DQ7 64 VSSQ

Features

VDD and VDDQ: 2.5V ± 0.2V (-5, -6).
VDD and VDDQ: 2.5V ± 0.1V (-4).
SSTL_2 compatible I/O.
Double-data rate architecture; two data transfers per clock cycle.
Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
Differential clock inputs (CK and CK).
DLL aligns DQ and DQS tran.

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Other Datasheets by Integrated Silicon Solution

IS43R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43R32400A - 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400D - 128Mb DDR SDRAM
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Published: Jul 25, 2016 |