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IS45S16400E Datasheet 1 Meg Bits X 16 Bits X 4 Banks (64-mbit) Synchronous Dynamic Ram

Manufacturer: ISSI (now Infineon)

Overview: IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC.

General Description

S A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe mand Column Address Strobe mand WE LDQM UDQM VDD GND VDDq GNDq NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power

Key Features

  • Clock frequency: 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 16ms (A2 grade) or 64ms (A1 grade).
  • Random column a.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ISSI Logo IS45S16400J SYNCHRONOUS DYNAMIC RAM ISSI

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16800E 128Mb SYNCHRONOUS DRAM
IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM
IS45S81600E 128Mb SYNCHRONOUS DRAM

IS45S16400E Distributor