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IS61C1024 - 128K x 8 HIGH-SPEED CMOS STATIC RAM

General Description

low power, 131,072-word by 8-bit CMOS static RAMs.

They are fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 12, 15, 20, 25 ns.
  • Low active power: 600 mW (typical).
  • Low standby power: 500 µW (typical) CMOS standby.
  • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM
IS61C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSI® MAY 1999 FEATURES • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 mW (typical) • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply • Low power version available: IS61C1024L • Commercial and industrial temperature ranges available DESCRIPTION The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology.