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IS61C1024AL - 128K x 8 HIGH-SPEED CMOS STATIC RAM

General Description

speed, low power, 131,072-word by 8-bit CMOS static RAMs.They are fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 12, 15 ns.
  • Low active power: 160 mW (typical).
  • Low standby power: 1000 µW (typical) CMOS standby.
  • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61C1024AL IS64C1024AL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2022 FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply • Commercial, industrial, and automotive tempera- ture ranges available • Lead free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61C1024AL/IS64C1024AL is a very high- speed, low power, 131,072-word by 8-bit CMOS static RAMs.They are fabricated using ISSI's high-performance CMOS technology.