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IS61C1024L - 128K x 8 HIGH-SPEED CMOS STATIC RAM

Download the IS61C1024L datasheet PDF. This datasheet also covers the IS61C1024 variant, as both devices belong to the same 128k x 8 high-speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

low power, 131,072-word by 8-bit CMOS static RAMs.

They are fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 12, 15, 20, 25 ns.
  • Low active power: 600 mW (typical).
  • Low standby power: 500 µW (typical) CMOS standby.
  • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61C1024-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSI® MAY 1999 FEATURES • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 mW (typical) • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply • Low power version available: IS61C1024L • Commercial and industrial temperature ranges available DESCRIPTION The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology.