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IS61DDB22M36 - DDR-II (Burst of 2) CIO Synchronous SRAMs

Download the IS61DDB22M36 datasheet PDF. This datasheet also covers the IS61DDB24M18 variant, as both devices belong to the same ddr-ii (burst of 2) cio synchronous srams family and are provided as variant models within a single manufacturer datasheet.

General Description

The 72Mb IS61DDB22M36 and IS61DDB24M18 are synchronous, high-performance CMOS static random access memory (SRAM) devices.

These SRAMs have a common I/O bus.

The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.

Key Features

  • 2M x 36 or 4M x 18.
  • On-chip delay-locked loop (DLL) for wide data valid window.
  • Common data input/output bus.
  • Synchronous pipeline read with self-timed late write operation.
  • Double data rate (DDR-II) interface for read and write input ports.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K) for address and control registering at rising edges only.
  • Two input cloc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61DDB24M18-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61DDB22M36C 72Mb DDR-II CIO SYNCHRONOUS SRAM ISSI
IS61DDB24M18C 72Mb DDR-II CIO SYNCHRONOUS SRAM ISSI
IS61DDP2B21M36C 36Mb DDR-IIP CIO SYNCHRONOUS SRAM ISSI
IS61DDP2B21M36C1 36Mb DDR-IIP CIO SYNCHRONOUS SRAM ISSI
IS61DDP2B21M36C2 36Mb DDR-IIP CIO SYNCHRONOUS SRAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61DDB22M36A 72Mb DDR-II (Burst 2) CIO SYNCHRONOUS SRAM
IS61DDB22M18 DDR-II (Burst of 2) CIO Synchronous SRAMs
IS61DDB22M18A 36Mb DDR-II (Burst 2) CIO SYNCHRONOUS SRAM
IS61DDB21M18A 18Mb DDR-II (Burst 2) CIO SYNCHRONOUS SRAM
IS61DDB21M36 DDR-II (Burst of 2) CIO Synchronous SRAMs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
72 Mb (2M x 36 & 4M x 18) . DDR-II (Burst of 2) CIO Synchronous SRAMs November 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late write operation. • Double data rate (DDR-II) interface for read and write input ports. • Fixed 2-bit burst for read and write operations. • Clock stop support. • Two input clocks (K and K) for address and control registering at rising edges only. • Two input clocks (C and C) for data output control. • Industrial temperature available upon request. • Two echo clocks (CQ and CQ) that are delivered simultaneously with data. • +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF. • HSTL input and output levels.