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IS62WV20488ALL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

General Description

power, 2M-word by 8-bit CMOS static RAM.

The IS62WV20488ALL/BLL is fabricated using ISSI's highperformance CMOS technology.

Key Features

  • High-speed access times: 25, 35 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • VDD 1.65V to 2.2V (IS62WV20488ALL) speed = 35ns for Vcc = 1.65V to 2.2V.
  • VDD 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V.
  • Packages available:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV20488ALL IS62WV20488BLL 2M x 8 HIGH-SPEED LOW POWER www.DataSheet4U.com CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – VDD 1.65V to 2.2V (IS62WV20488ALL) speed = 35ns for Vcc = 1.65V to 2.2V – VDD 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V • Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II) • Industrial Temperature Support • Lead-free available ISSI DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM.