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IS62WV20488EALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62WV20488EALL/BLL and IS65WV20488EALL/BLL are high-speed, 16M bit static RAMs organized as 2M words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 30 mW (typical) operating.
  • 12 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V.
  • 1.98V Vdd (62/65WV20488EALL).
  • 2.2V--3.6V Vdd (62/65WV20488EBLL).
  • Fully static operation: no clock or refresh required.
  • Industrial (-40oC to +85oC) and Automotive (-40oC to +125oC) temperature support BLOCK.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV20488EBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV25616DALL ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV25616EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62/65WV20488EALL IS62/65WV20488EBLL 2Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2015 FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 30 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV20488EALL) – 2.2V--3.6V Vdd (62/65WV20488EBLL)  Fully static operation: no clock or refresh required  Industrial (-40oC to +85oC) and Automotive (-40oC to +125oC) temperature support BLOCK DIAGRAM DESCRIPTION The ISSI IS62WV20488EALL/BLL and IS65WV20488EALL/BLL are high-speed, 16M bit static RAMs organized as 2M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.