Datasheet4U Logo Datasheet4U.com

IS62WV20488BLL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

Download the IS62WV20488BLL datasheet PDF. This datasheet also covers the IS62WV20488ALL variant, as both devices belong to the same 2m x 8 high-speed low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

power, 2M-word by 8-bit CMOS static RAM.

The IS62WV20488ALL/BLL is fabricated using ISSI's highperformance CMOS technology.

Key Features

  • High-speed access times: 25, 35 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • VDD 1.65V to 2.2V (IS62WV20488ALL) speed = 35ns for Vcc = 1.65V to 2.2V.
  • VDD 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V.
  • Packages available:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV20488ALL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV20488EALL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS62WV20488EBLL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS62WV25616DALL ULTRA LOW POWER CMOS STATIC SRAM ISSI
IS62WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM ISSI
IS62WV25616EALL ULTRA LOW POWER CMOS STATIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV20488ALL 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
IS62WV25616ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV25616BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568BLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV20488ALL IS62WV20488BLL 2M x 8 HIGH-SPEED LOW POWER www.DataSheet4U.com CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – VDD 1.65V to 2.2V (IS62WV20488ALL) speed = 35ns for Vcc = 1.65V to 2.2V – VDD 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V • Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II) • Industrial Temperature Support • Lead-free available ISSI DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM.