Datasheet4U Logo Datasheet4U.com

M28F010 - 1024K (128K x 8) CMOS FLASH MEMORY

Datasheet Summary

Description

Symbol A0 A16 DQ0 DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUT OUTPUT Inputs data during memory write cycles outputs data during memory read cycles The data pins are active high an

Features

  • g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y Y Y Y ETOX-III Flash-Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10 000 Program Erase Cycles Minimum Available in Three Product Grades QML b 55 C to a 125 C (TC) SE2 b 40 C to a 125 C (TC) SE3 b 40 C to a 110 C (TC) Y Intel’s M28F010 is a 1024-Kbit byte-wide in-system re-writable CMOS nonvolatile flash memory It is organized.

📥 Download Datasheet

Datasheet preview – M28F010

Datasheet Details

Part number M28F010
Manufacturer Intel Corporation
File Size 317.31 KB
Description 1024K (128K x 8) CMOS FLASH MEMORY
Datasheet download datasheet M28F010 Datasheet
Additional preview pages of the M28F010 datasheet.

📁 Similar Datasheet

  • M28F101 - 1 Mb FLASH MEMORY (STMicroelectronics)
  • M28F102 - 1 Mbit Flash Memory (STMicroelectronics)
  • M28F201 - 2 Mb FLASH MEMORY (STMicroelectronics)
  • M28F210 - (M28F210 / M28F220) 2M Flash Memory (ST Microelectronics)
  • M28F211 - (M28F211 / M28F221) 2M Flash Memory (ST Microelectronics)
  • M28F220 - (M28F210 / M28F220) 2M Flash Memory (ST Microelectronics)
  • M28F221 - (M28F211 / M28F221) 2M Flash Memory (ST Microelectronics)
  • M28F256 - 256 Kbit Flash Memory (STMicroelectronics)
  • M28F410 - 4-Megabit Flash Memory (ST Microelectronics)
  • M28F420 - 4-Megabit Flash Memory (ST Microelectronics)
Other Datasheets by Intel Corporation
  • M28F008 - 8 MBIT (1 MBIT x 8) FLASH MEMORY

Full PDF Text Transcription

Click to expand full text
M28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption 30 mA Maximum Active Current 100 mA Maximum Standby Current Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y Y Y Y ETOX-III Flash-Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10 000 Program Erase Cycles Minimum Available in Three Product Grades QML b 55 C to a 125 C (TC) SE2 b 40 C to a 125 C (TC)
Published: |