GE28F640J3C
Key Features
- Performance
- Architecture - 110/115/120/150 ns Initial Access Speed - Multi-Level Cell Technology: High - 125 ns Initial Access Speed (256 Mbit density only) - 25 ns Asynchronous Page mode Reads - 30 ns Asynchronous Page mode Reads (256Mbit density only) - 32-Byte Write Buffer -6.8 µs per byte effective programming time
- Software Density at Low Cost - High-Density Symmetrical 128-Kbyte Blocks -256 Mbit (256 Blocks) (0.18µm only) -128 Mbit (128 Blocks) -64 Mbit (64 Blocks) -32 Mbit (32 Blocks)
- Quality and Reliability - Operating Temperature: -40 °C to +85 °C - Program and Erase suspend support - 100K Minimum Erase Cycles per Block - Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
- Security - 128-bit Protection Register -64-bit Unique Device Identifier -64-bit User Programmable OTP Cells - Absolute Protection with VPEN = G
